Hotline:+86-0756-3616260

Flash memory can be electrically programmed a single byte or word at a time, but a large group of bytes or words-called a block, sector, or page-are electrically erased at the same time. There are two main architectures: NOR and NAND.

NOR Flash is typical used for code storage and execution, and allows quick random access to any location in the memory array. CFX can offer two types of NOR Flash memory: Serial and Parallel Mode. Samples will be available 1st half of 2017.

NAND Flash is sector-based (page-based) and well suited for storage of sequential data, providing the higher densities required for today’s low-cost consumer devices in a significantly reduced die area, and benefits of NAND Flash are faster PROGRAM and ERASE times. CFX will be offering 1Gbits to 4Gbits NAND and 16GB/32GB/64GB eMMC NAND .

 

Parameter

Serial

Parallel

Density

512 Kbit to 512 Mbit

Operating Voltage

2.7 to 3.6 volt

Temperature Range

-40 to +85

Clock Frequency

80MHz to 120MHz

Program

Page: 0.7ms

Erase

Sector:40ms;Block:0.2s;Chip:0.8s

Power Consumption

18mA active current;5uA power down current

Cycling endurance

Minimum 100K

Data Retention

20 years

Packages

SOP8;TSSOP8;USON8





ICP 京ICP备15047898号-1    Copyright © 2014-2016 CFX technology all rights reserved